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TYPICAL PERFORMANCE CURVES
1200V APT25GN120B_S(G) APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
(B)
TO -2 47
D3PAK
C G E
(S)
G
C
E
* 1200V Field Stop * Trench Gate: Low VCE(on) * Easy Paralleling * Integrated Gate Resistor: Low EMI, High Reliability
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT25GN120B(G) UNIT Volts
1200 30 67 33 75 75A @ 1200V 272 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 150A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
1200 5 1.4 5.8 1.7 1.9 100
2
6.5
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C)
2.1
I CES I GES RG(int)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2
A nA
9-2009 050-7600 Rev E
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Integrated Gate Resistor
TBD 600 8
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT25GN120B_S(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 25A TJ = 150C, R G = 4.3 7, VGE = 15V, L = 100H,VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 25A
4 5
MIN
TYP
MAX
UNIT
1800 105 85 9.5 155 10 85 75 22 17 280 135 TBD 1490 2150 22 17 335 225 TBD 2390 3075 mJ
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
RG = 1.0 7 TJ = +25C
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
mJ
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 25A RG = 1.0 7
55
Turn-on Switching Energy (Diode) Turn-off Switching Energy
66
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.46 N/A 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
9-2009
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
050-7600
Rev E
TYPICAL PERFORMANCE CURVES
80 70 IC, COLLECTOR CURRENT (A) 60 50 40 10V 30 20 10 0 9V 8V 7V 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
APT25GN120B_S(G)
80 15V 70
15V 12V 11V IC, COLLECTOR CURRENT (A)
60 12V 50 11V 40 30 20 10 0 10V 9V 8V 7V 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25C) 75 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125C) 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 GATE CHARGE (nC)
I = 25A C T = 25C
J
IC, COLLECTOR CURRENT (A)
60 TJ = 125C 45 TJ = 25C 30 TJ = -55C 15
VCE = 240V VCE = 600V VCE = 960V
0
0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3
FIGURE 4, Gate Charge IC = 50A 2.5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4 3.5 3 2.5 2 1.5 1.0 0.5 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10 0 8 IC = 12.5A IC = 25A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 50A
2 IC = 25A 1.5 1 0.5 IC = 12.5A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 90
0 -50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
80 70 60 50 40 9-2009 050-7600 Rev E 30 20 10 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
1.05
1.00
0.95
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
APT25GN120B_S(G)
30 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 25 20 15 10 5 0
VCE = 800V TJ = 25C, or 125C RG = 4.3 L = 100H
350 300 250
VGE =15V,TJ=25C VGE =15V,TJ=125C
VGE = 15V
200 150 100 50 0
VCE = 800V RG = 4.3 L = 100H
10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 45 40
RG = 4.3, L = 100H, VCE = 800V
10 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 300 250
RG = 4.3, L = 100H, VCE = 800V
35 tr, RISE TIME (ns) 30 25 20 15 10 5 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 7000 EON2, TURN ON ENERGY LOSS (J) 6000 5000 4000 3000 2000 1000 0
V = 800V CE V = +15V GE R = 4.3
G
TJ = 125C, VGE = 15V
tf, FALL TIME (ns)
200 150 100 50
TJ = 25C, VGE = 15V
TJ = 25 or 125C,VGE = 15V
0
10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 7000 EOFF, TURN OFF ENERGY LOSS (J) 6000 5000 4000 3000 2000
TJ = 25C
V = 800V CE V = +15V GE R = 4.3
G
0
TJ = 125C
TJ = 125C
TJ = 25C
1000 0
10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 14000 SWITCHING ENERGY LOSSES (J) 12000 10000 Eoff,50A 8000 6000 4000 2000 0 Eoff,25A Eon2,25A Eoff,12.5A Eon2,12.5A 0
V = 800V CE V = +15V GE T = 125C
J
10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 7000
V = 800V CE V = +15V GE R = 4.3
G
Eon2,50A
SWITCHING ENERGY LOSSES (J)
Eoff,50A
6000 5000 4000
Eon2,50A 3000 Eoff,25A 2000 1000 0 Eoff,12.5A Eon2,12.5A 0 Eon2,25A
Rev E
9-2009
050-7600
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
4,000 IC, COLLECTOR CURRENT (A) Cies 1,000 C, CAPACITANCE ( F)
P
80 70 60 50 40 30 20 10
APT25GN120B_S(G)
500
100 50
Coes Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0
0.50 D = 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0.05 0 10-5 10-4 SINGLE PULSE
Note:
ZJC, THERMAL IMPEDANCE (C/W)
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
140 FMAX, OPERATING FREQUENCY (kHz) 100
50
RC MODEL Junction temp. (C) 0.0536 Power (watts) 0.169 Case temperature. (C) 0.353 0.00826
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf
T = 125C J T = 75C C D = 50 % = 800V V CE R = 4.3
G
f max2 = Pdiss =
Pdiss - P cond E on2 + E off TJ - T C R JC
10
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
15 20 25 30 35 40 45 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
5
10
050-7600
Rev E
9-2009
APT25GN120B_S(G)
Gate Voltage 10%
APT30DQ120
td(on)
TJ = 125C
V CC
IC
V CE
tr
90% Collector Current
5%
10%
5%
A D.U.T.
Switching Energy
CollectorVoltage
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
TJ = 125C
td(off) 90%
CollectorVoltage
tf 10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline
e3 100% Sn Plated
Collector (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
9-2009
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Collector Emitter
Heat Sink (Collector) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Emitter Collector Gate Dimensions in Millimeters (Inches)
050-7600
Rev E
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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